Pure single-photon emission from an InGaN/GaN quantum dot
نویسندگان
چکیده
Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN dots promising candidates the development single-photon but have typically exhibited emission insufficient purity. Here, pulsed is measured from an InGaN dot. A raw g(2)(0) value 0.043 ± 0.009 no corrections whatsoever achieved under quasi-resonant excitation. Such a low is, in principle, sufficient use key distribution systems.
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ژورنال
عنوان ژورنال: APL Materials
سال: 2021
ISSN: ['2166-532X']
DOI: https://doi.org/10.1063/5.0049488